Transistor PDF Datasheets

Transistor Catalog

Latest Transistor Data Sheet

  • Part Nnmber
  • Manufacturer
  • Description
  • FCA47N60_F109
  • Fairchild Semiconductor 
  • new generation of high voltage MOSFET 
  • FCA16N60_07
  • Fairchild Semiconductor 
  • 600V N-Channel MOSFET 
  • FCA16N60_06
  • Fairchild Semiconductor 
  • 600V N-Channel MOSFET 
  • FCA16N60N
  • Fairchild Semiconductor 
  • N-Channel MOSFET 600V, 16A, 0.170W 
  • FB1L2Q
  • NEC 
  • COMPOUND TRANSISTOR 
  • FA4F4M
  • NEC 
  • RESISTOR BUILT-IN TYPE NPN TRANSISTOR 
  • F5H2201
  • Sanyo Semicon Device 
  • NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching 
  • F2201S
  • Polyfet RF Devices 
  • PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 
  • F2013
  • Polyfet RF Devices 
  • PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 
  • F12F50VX2
  • Shindengen Electric Mfg.Co.Ltd 
  • VX-2 Series Power MOSFET 
  • FZT955_05
  • Zetex Semiconductors 
  • SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS 
  • FZT857_03
  • Zetex Semiconductors 
  • SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR 
  • FZT855
  • Zetex Semiconductors 
  • NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR 
  • FZT755_05
  • Zetex Semiconductors 
  • SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR 
  • HVV1214-100-EK
  • HVVi Semiconductors, Inc. 
  • L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty For Ground Based Radar Applications 
  • HVV1214-100
  • HVVi Semiconductors, Inc. 
  • L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty For Ground Based Radar Applications 
  • HVV1214-025S
  • HVVi Semiconductors, Inc. 
  • L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty 
  • HVV1214-025
  • HVVi Semiconductors, Inc. 
  • L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty for Ground Based Radar Applications